A Sentaurus TCAD 2-D model of β-Ga2O3 metal-oxide semiconductor field-effect transistors (MOSFETs) with a polycrystalline HfO2 gate-oxide deposited using atomic layer deposition (ALD), which has a semiconductor-on-insulator (SOI) structure, is developed. The results of model shows good agreement with the DC and the AC characteristics of the fabricated device by incorporating proper parameters for the materials, as well as the device models. We also investigate and compare electrical performance of the devices with modified HfO2 gate-oxide geometries. With a reduced HfO2 coverage over the channel, the transconductance (gm) is enhanced, the threshold voltage (Vth) shifts toward a positive voltage, both of which are advantageous for device applications. Moreover, radiation effects during transient operation of the β-Ga2O3 MOSFETs are evaluated and compared for the fabricated and the modified oxide geometries by incorporating carrier generation models with heavy-ions and alpha particles.

中文翻译：

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ALD HfO2 栅极氧化物几何形状对 β-Ga2O3 MOSFET 电性能和单事件效应的影响：模拟研究

Sentaurus TCAD 2-D β-Ga2O3 金属氧化物半导体场效应晶体管 (MOSFET) 模型，具有使用原子层沉积 (ALD) 沉积的多晶 HfO2 栅极氧化物，具有绝缘体上半导体 (SOI) 结构, 开发。通过结合适当的材料参数以及器件模型，模型的结果与制造的器件的直流和交流特性具有良好的一致性。我们还研究并比较了具有改进的 HfO2 栅极氧化物几何形状的器件的电气性能。随着通道上 HfO2 覆盖率的降低，跨导 (gm) 增强，阈值电压 (Vth) 向正电压移动，这两者都有利于器件应用。而且，