Here, a new design of a variable micro electromechanical system (MEMS) capacitor is introduced to use in telecommunication systems. For the first time, an on-chip MEMS component has been used in the substrate integrated waveguide (SIW) structures to avoid discrete and non-integrated connection problems and high noise levels and affects the operating frequency of telecommunication systems. The behaviour of two capacitors with the fixed–fixed and supported membrane by special spiral arms is analysed and simulated using the finite element method. The MEMS bridges are implemented by a 6 μm gold layer and an air gap of 3 μm. It can be seen that using the new special arms, the movement of the membrane is more uniform than the clamped while the actuation voltage is up to 1.32 V and the tuning range of the capacitor is 29%. Then both the capacitors are placed on half-mode SIW structure and the electromagnetic simulation is done. Finally, the results comparison shows that the frequency tuning range of the MEMS variable capacitor is more significant than the other.

中文翻译：

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可调HMSIW谐振器的可变MEMS电容器的设计与仿真。

在此，介绍了一种可变微机电系统（MEMS）电容器的新设计，以用于电信系统。首次在片上集成波导（SIW）结构中使用了片上MEMS组件，以避免离散和非集成连接问题以及高噪声水平并影响电信系统的工作频率。使用有限元方法分析和模拟了两个带有特殊螺旋臂的固定和支撑膜的电容器的行为。MEMS桥由6μm的金层和3μm的气隙实现。可以看出，使用新的专用臂，在驱动电压高达1.32 V且电容器的调谐范围为29％时，膜片的运动比被夹持的膜片更加均匀。然后将两个电容器都置于半模SIW结构上，并完成了电磁仿真。最后，结果比较表明，MEMS可变电容器的频率调谐范围比其他电容器更重要。