This brief presents a nano-ampere CMOS current reference (CCR) for low power application with a wide temperature range from −40°C to 120°C. The current reference is generated by the division of a temperature-independent voltage and resistance in a simple way. The low temperature-independent voltage is generated based on the threshold voltage difference between two same-type NMOS transistors with different channel lengths working in the subthreshold region, while the temperature-independent resistance is made up by two poly resistors, whose temperature coefficients are opposite. By designing a low voltage to allow for a small resistance, the CCR circuit takes a small chip area while generating nano-ampere current. The proposed CCR circuit was implemented in a standard 0.18- ${\mu }\text{m}$ CMOS process and its active area is 0.054 mm2. Among the measured 10 samples, the average output current is 11.6 nA and the average temperature coefficient is 169 ppm/°C.

中文翻译：

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A -40 ∘C 至 120 ∘C，169 ppm/∘C 纳米安培 CMOS 电流基准

本简介介绍了一种适用于低功率应用的纳安级 CMOS 电流基准 (CCR)，温度范围为 -40°C 至 120°C。电流基准是通过以一种简单的方式对与温度无关的电压和电阻进行分压而产生的。低温无关电压是基于两个不同沟道长度的同类型NMOS晶体管在亚阈值区工作的阈值电压差产生的，而温度无关电阻由两个温度系数相反的多晶硅电阻组成. 通过设计低电压以允许小电阻，CCR 电路在产生纳安级电流的同时占用较小的芯片面积。建议的 CCR 电路采用标准 0.18-${\mu}\text{m}$ CMOS 工艺实现，其有效面积为 0.054 mm2。