We developed a 300-GHz-band 120-Gb/s wireless transceiver front-ends (TRX) using our in-house InP-based high-electron-mobility-transistor (InP-HEMT) technology for beyond-5G. The TRX is composed of the RF power amplifiers (PAs), mixers, and local oscillation (LO) PAs which are all packaged in individual waveguide (WG) modules by using a ridge coupler for low-loss WG-to-IC transition. RF PAs are designed using the low-impedance inter-stage-matching technique to reduce the inter-stage matching loss of the amplifier stages, and the back-side DC line (BDCL) technique is used to simplify the layout and to improve the gain of the PAs. The fabricated RF PAs show a high output 1-dB compression point of more than 6 dBm from 278 to 302 GHz. The mixers are used for both up- and down-conversion in the transmitter and receiver. These mixers are designed to have high conversion gain (CG) over the wideband even after packaging by enhancing the isolation between the RF and IF ports. The measured CG of mixer module is −15 dB, and the 3-dB IF-bandwidth is 32 GHz. The LO PAs are also designed using the BDCL technique so that they can supply the required LO power to the mixers. The TRX with these InP building blocks enables the data transmission of a 120 Gb/s 16QAM signal over a link distance of 9.8 m.

中文翻译：

---

基于 InP-HEMT PA 和混频器的 300 GHz 频段 120 Gb/s 无线前端

我们使用我们内部基于 InP 的高电子迁移率晶体管 (InP-HEMT) 技术开发了 300 GHz 频段 120 Gb/s 无线收发器前端 (TRX)，用于超 5G。TRX 由 RF 功率放大器 (PA)、混频器和本地振荡 (LO) PA 组成，它们全部封装在单独的波导 (WG) 模块中，通过使用脊耦合器实现低损耗 WG 到 IC 的转换。RF PA采用低阻抗级间匹配技术设计，以降低放大器级的级间匹配损耗，并采用背面直流线路（BDCL）技术简化布局并提高增益的 PA。制造的 RF PA 在 278 至 302 GHz 范围内显示出超过 6 dBm 的高输出 1-dB 压缩点。混频器用于发射器和接收器中的上变频和下变频。这些混频器旨在通过增强 RF 和 IF 端口之间的隔离，即使在封装后在宽带上也具有高转换增益 (CG)。混频器模块的实测 CG 为 -15 dB，3-dB 中频带宽为 32 GHz。LO PA 也使用 BDCL 技术设计，以便它们可以向混频器提供所需的 LO 功率。带有这些 InP 构建块的 TRX 能够在 9.8 m 的链路距离上实现 120 Gb/s 16QAM 信号的数据传输。