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High Performance SiGe Body-On-Insulator (BOI) FinFET Fabricated on Bulk Si Substrate Using Ge Condensation Technique
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-09-01 , DOI: 10.1109/led.2020.3007333
Zhexuan Ren , Xia An , Bingxin Zhang , Shuang Sun , Fei Gao , Ming Li , Xing Zhang , Ru Huang

A novel high performance SiGe Body-On-Insulator (BOI) FinFET device fabricated on bulk silicon substrate is demonstrated in this letter. A key fabrication process of “isotropic etching + Ge condensation” is firstly proposed to simultaneously achieve localized insulator below SiGe Fin and suppressed diffusion of Ge atoms, as well as increased Ge content in the channel. The process is compatible with conventional CMOS technology with low cost based on bulk Si substrate. Compared with control bulk Si FinFET fabricated with similar process, the off-state leakage current (I $_{\textit {off}}$ ) and the on current (I $_{\textit {on}}$ ) of SiGe BOI FinFET is at least one order of magnitude smaller and $2\times $ larger, respectively, suggesting excellent application potential of the device.

中文翻译:

使用 Ge 凝聚技术在块状 Si 衬底上制造的高性能 SiGe 绝缘体上体 (BOI) FinFET

这封信展示了一种在体硅衬底上制造的新型高性能 SiGe 绝缘体上体 (BOI) FinFET 器件。首次提出了“各向同性蚀刻+Ge凝聚”的关键制造工艺,以同时实现SiGe Fin下方的局部绝缘体和抑制Ge原子的扩散,以及增加沟道中的Ge含量。该工艺与基于体硅衬底的低成本传统 CMOS 技术兼容。与采用类似工艺制造的控制体 Si FinFET 相比,断态漏电流 (一世 $_{\textit {off}}$ ) 和接通电流 (一世 $_{\textit {on}}$ ) 的 SiGe BOI FinFET 至少小一个数量级,并且 $2\times $ 分别较大,表明该器件具有出色的应用潜力。
更新日期:2020-09-01
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