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On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-09-01 , DOI: 10.1109/led.2020.3010240
Hung-Yu Ye , C. W. Liu

The TreeFET channel, which is a combination of vertically stacked nanosheet channels and fin-shaped interbridge channels in between the nanosheets, can provide an additional channel conduction area to improve the on-current without increasing the device footprint. To provide on-current enhancement, a minimum height is required for the interbridge that is dependent on the width of the interbridge and the physical gate oxide thickness. Minimizing the threshold voltage difference between the interbridges and the nanosheet channels also plays a crucial role in the optimization of the on-current of TreeFETs. The design criteria for TreeFETs are studied using TCAD simulation of Ge nFETs.

中文翻译:

通过结合垂直堆叠的纳米片和桥接来增强 TreeFET 的导通电流

TreeFET 通道是垂直堆叠的纳米片通道和纳米片之间的鳍形桥间通道的组合,可以提供额外的通道传导面积,以提高导通电流,而不会增加器件占用空间。为了提供导通电流增强,桥间需要一个最小高度,这取决于桥间的宽度和物理栅极氧化层厚度。最小化桥间和纳米片通道之间的阈值电压差在优化 TreeFET 的导通电流方面也起着至关重要的作用。使用 GenFET 的 TCAD 模拟来研究 TreeFET 的设计标准。
更新日期:2020-09-01
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