This paper shows that vertical GaN-on-GaN p–i–n diodes are able to withstand long-term operation in moderate avalanche conduction regime, thus proving the excellent stability of the gallium nitride material system. Under constant stress in stronger avalanche regime, the devices show a significant increase in the series resistance, a slight increase in forward voltage and a measurable increase in avalanche voltage. Degradation is ascribed to the generation of defects, a process which is likely occurring in the intrinsic region. The time-dependence of the performance loss is explained by considering the simultaneous presence of field-assisted trapping in the avalanche region and of charge de-trapping in the medium-field region of the devices. An interpretative model based on these assumptions is proposed to explain the full set of the experimental data.

中文翻译：

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雪崩状态下的 GaN 垂直 p–i–n 二极管：随时间变化的行为和退化

本文表明，垂直 GaN-on-GaN p-i-n 二极管能够在中等雪崩传导状态下长期运行，从而证明氮化镓材料系统具有出色的稳定性。在更强雪崩状态下的恒定应力下，器件显示串联电阻显着增加，正向电压略有增加，雪崩电压可测量增加。退化归因于缺陷的产生，这一过程很可能发生在本征区。性能损失的时间依赖性通过考虑同时存在雪崩区域中的场辅助俘获和器件的中场区域中的电荷去俘获来解释。