When the gated channel region of a GaN high-electron-mobility transistor (HEMT) is configured into multiple sub-channels in parallel and separated by embedded isolating patterns, the effective resistance of the access regions could be reduced, and consequently, the knee voltage ( ${V}_{{\text {K}}}$ ) of the transistor could be lowered. In this work, each sub-channel is defined as a convergent funnel-like shape, with its width gradually shrunk from the source side to the drain side. Different from conventional channels with uniform width under the entire gate, the funnel-shaped channel could converge electrons as they transport from source side to drain side, which facilitates electrons’ acceleration toward saturation velocity under a smaller drain-to-source bias, leading to a reduced intrinsic ${V}_{{\text {K}}}$ in the gated channel. Thus, more desirable ${I}$ - ${V}$ characteristics and more balanced performance enhancement in RF linearity and power added efficiency are achieved at a low supply voltage, making the convergent-channel HEMT attractive for power amplifiers in mobile terminals.

中文翻译：

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具有收敛通道的 GaN HEMT 用于低本征拐点电压

当 GaN 高电子迁移率晶体管 (HEMT) 的栅极沟道区被配置为多个并行子沟道并由嵌入式隔离图案分隔时，可以降低接入区的有效电阻，从而降低拐点电压( ${V}_{{\text {K}}}$ ) 的晶体管可以降低。在这项工作中，每个子通道被定义为一个收敛的漏斗状形状，其宽度从源极侧向漏极侧逐渐缩小。与整个栅极下宽度均匀的传统通道不同，漏斗形通道可以在电子从源极侧传输到漏极侧时会聚，这有利于电子在较小的漏源偏压下加速向饱和速度，从而导致减少的内在 ${V}_{{\text {K}}}$ 在门控通道中。因此，更可取 ${I}$ —— ${V}$ 在低电源电压下实现了 RF 线性度和功率附加效率方面的更平衡的性能和更平衡的性能增强，使得会聚通道 HEMT 对移动终端中的功率放大器具有吸引力。