GaInAs-based Metal Oxide Semiconductor High Electron Mobility Transistors (MOS-HEMTs) can in principle combine the wide bandwidth of HEMTs to the low gate leakage current of MOSFETs in a single deeply-scaled ultrahigh speed low-noise technology. Despite advances in the fabrication of MOS-HEMT devices and MMICs, the transistor microwave noise properties of GaInAs MOS-HEMT devices have not yet been reported. In the present study, the room temperature DC and wideband RF noise properties (8-50 GHz) of GaInAs channel MOS-HEMTs are characterized and contrasted to those of a 50 nm low-noise HEMT with the same channel composition/thickness and similar ${f}_{{\text {T}}}$ : at a given bias ${V}_{{\text {DS}}} = {0.5}$ V, the HEMT provides lower minimal noise figures ( ${\textit {NF}}_{{\text {MIN}}}$ ) and higher associated gain. In contrast to HEMTs, the MOS-HEMTs particularly suffer from lower frequency noise contributions attributed to enhanced impact ionization. Remarkably, operation at ${V}_{{\text {DS}}} = {0.4}$ V to mitigate ionization enables MOS-HEMTs to match the HEMT wideband ${\textit {NF}}_{{\text {MIN}}}$ performance despite a significantly poorer low-field channel mobility. The present MOS-HEMTs show the highest reported maximum oscillation frequency ${f}_{{\text {MAX}}} = 637$ GHz for a measured gate length ${L}_{G} = {33}$ nm and a ( $2\times15$ ) $\mu \text{m}$ width. Gate annealing is shown to be deleterious to the MOS-HEMT DC and noise properties.

中文翻译：

---

30 nm GaInAs MOS-HEMT 的低噪声微波性能：与低噪声 HEMT 的比较

GaInAs 基金属氧化物半导体高电子迁移率晶体管 (MOS-HEMT) 原则上可以将 HEMT 的宽带宽与 MOSFET 的低栅极漏电流结合在单一深度缩放超高速低噪声技术中。尽管 MOS-HEMT 器件和 MMIC 的制造取得了进展，但尚未报道 GaInAs MOS-HEMT 器件的晶体管微波噪声特性。在本研究中，表征了 GaInAs 通道 MOS-HEMT 的室温 DC 和宽带 RF 噪声特性（8-50 GHz），并将其与具有相同通道组成/厚度和相似的 50 nm 低噪声 HEMT 的特性进行了对比。 ${f}_{{\text {T}}}$ : 在给定的偏差 ${V}_{{\text {DS}}} = {0.5}$ V，HEMT 提供较低的最小噪声系数（ ${\textit {NF}}_{{\text {MIN}}}$ ) 和更高的相关增益。与 HEMT 相比，MOS-HEMT 特别受到归因于增强碰撞电离的低频噪声贡献的影响。值得注意的是，操作在 ${V}_{{\text {DS}}} = {0.4}$ V 减轻电离使 MOS-HEMT 能够匹配 HEMT 宽带 ${\textit {NF}}_{{\text {MIN}}}$ 尽管低场沟道迁移率显着较差，但性能仍然很差。目前的 MOS-HEMT 显示出最高报告的最大振荡频率 ${f}_{{\text {MAX}}} = 637$ GHz 测量栅极长度 ${L}_{G} = {33}$ nm 和一个 ( $2\times15$ ) $\mu \text{m}$ 宽度。栅极退火对 MOS-HEMT DC 和噪声特性有害。