High voltage thin film transistor (HVTFT) built on glass can be used for distributed micro-inverters in the emerging applications, such as the building-integrated photovoltaics (BIPV) and smart glass. We report an HVTFT with a center-symmetric circular configuration which is built on a glass substrate at low temperature. The device is composed of a magnesium zinc oxide (MZO) based channel and a high- $\kappa $ stacked gate dielectric layer of aluminum oxide/silicon dioxide (Al₂O₃/SiO₂). This MZO HVTFT enables a blocking voltage of 900 volts. The high blocking capability is attributed to the lower gate leakage current through the stacked dielectric layer. The device under 10V drain bias shows an on/off current ratio over 10⁹.

中文翻译：

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屏蔽电压为 900 V 的玻璃上的 MgZnO 薄膜晶体管

建立在玻璃上的高压薄膜晶体管（HVTFT）可用于新兴应用中的分布式微型逆变器，例如建筑集成光伏（BIPV）和智能玻璃。我们报告了一种具有中心对称圆形配置的 HVTFT，它在低温下建立在玻璃基板上。该器件由基于氧化镁锌 (MZO) 的通道和高 $\kappa $ 氧化铝/二氧化硅（Al ₂ O ₃ /SiO ₂）的堆叠栅极介电层。该 MZO HVTFT 可实现 900 伏的阻断电压。高阻断能力归因于通过堆叠介电层的较低栅极漏电流。10V 漏极偏压下的器件的开/关电流比超过 10 ⁹。