Freestanding thin-film transistors (TFTs) with multiple in-plane gates could meet increasing demands of mechanical flexibility and multifunctional integration. In this letter, freestanding flexible indium-zinc-oxide based TFTs with multi-gate structure and high electrical performance were reported. No obviously electrical degradation is observed under various mechanical stimuli due to the mechanical reinforcement effect of graphene oxide. Multifunctional operations including AND, OR gates and a Schmitt trigger are successfully demonstrated. More importantly, OR logic to AND logic transformation is also realized by a third modulatory terminal. Such freestanding TFTs are promising candidates for next-generation flexible smart electronic systems.

中文翻译：

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氧化石墨烯增强电解质膜上的独立多栅非晶氧化物基 TFT

具有多个面内栅极的独立式薄膜晶体管 (TFT) 可以满足机械灵活性和多功能集成日益增长的需求。在这封信中，报道了具有多栅极结构和高电性能的独立式柔性氧化铟锌基 TFT。由于氧化石墨烯的机械增强作用，在各种机械刺激下未观察到明显的电降解。成功演示了包括与、或门和施密特触发器在内的多功能操作。更重要的是，OR逻辑到AND逻辑的转换也是通过第三个调制端来实现的。这种独立的 TFT 是下一代柔性智能电子系统的有希望的候选者。