In this letter, the effects of negative and positive bias stability with respect to the anion composition of Zn–O–N thin-film transistors were researched. In the positive bias stress tests, the threshold voltage shift was high for ZnON devices with high nitrogen composition. In contrast to this, the negative bias stress test results have smaller $\Delta ~\text{V}_{th}$ values when nitrogen composition in ZnON was low. This different degradation behavior of ZnON for thin-film transistors was analyzed by using the subgap density of states which were obtained from monochromatic photonic capacitance-voltage measurement.

中文翻译：

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阴离子成分对Zn-O-N薄膜晶体管偏置应力稳定性的影响

在这封信中，研究了负偏压和正偏压稳定性对 Zn-O-N 薄膜晶体管阴离子组成的影响。在正偏压应力测试中，具有高氮成分的 ZnON 器件的阈值电压偏移很高。与此相反，负偏差压力测试结果有较小的 $\Delta ~\text{V}_{th}$ ZnON 中的氮成分较低时的值。通过使用从单色光子电容-电压测量获得的子能隙状态密度，分析了薄膜晶体管 ZnON 的这种不同降解行为。