The green InGaN/GaN micro light-emitting diode (Micro-LED) is a significant component in micro-display whereas lack of size dependence and high injected current analysis. In this letter, different size Micro-LEDs were fabricated and the electro-optical characteristics were measured. The size-dependence phenomenon for EQE “efficiency droop”, luminous flux and brightness were observed and discussed. All sizes Micro-LEDs exhibited an extremely high brightness as 37.5k and 67.6k nits at 1 A/cm², 2.89M and 3.81M nits at 300 A/cm² for 25 and $200~\mu \text{m}$ respectively. In addition, the elevating current densities from 160 to 6400 A/cm² were injected into $25~\mu \text{m}$ Micro-LED and the electroluminescence (EL) spectra transformation of different current densities were depicted. The green to blue shift and secondary peak effect, which promise an opportunity to modulate the emission wavelength for higher quality and lower the barrier of mass transfer technology, were observed and analyzed through the spectra.

中文翻译：

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具有二次峰值效应的高亮度 InGaN/GaN Micro-LED 用于显示器

绿色 InGaN/GaN 微型发光二极管 (Micro-LED) 是微型显示器的重要组件，但缺乏尺寸依赖性和高注入电流分析。在这封信中，制造了不同尺寸的 Micro-LED 并测量了电光特性。观察和讨论了EQE“效率下降”、光通量和亮度的尺寸依赖性现象。所有尺寸的 Micro-LED 都表现出极高的亮度，1 A/cm ²时为 37.5k 和 67.6k 尼特，25 和300 A/cm ^{2 时}为2.89M 和 3.81M 尼特 $200~\mu \text{m}$ 分别。此外，提高电流密度从 160 到 6400 A/cm ²注入到 $25~\mu \text{m}$ 描绘了 Micro-LED 和不同电流密度的电致发光 (EL) 光谱转换。通过光谱观察和分析了绿到蓝移和二次峰效应，这些效应有望调节发射波长以获得更高质量并降低传质技术的障碍。