In this letter, a novel, electrostatic discharge tolerant, semiconductor-based electro-explosive device was presented. The device which was called integrated semiconductor bridge (ISCB) chip consists of a monocrystalline silicon heating element, which was utilized to ignite pyrotechnic mix in weapon. Two planar transient suppression diode arrays were incorporated into the chip to protect against electrostatic discharge events. The characteristic of transient suppression diode array and electric discharge characteristic of the ISCB was tested by a capacitive discharge unit. Meanwhile, the behavior of the ISCB during electrostatic discharge events was also tested with a human body electrostatic discharge model. The results showed that the ISCB chip provided advantages including small size, fast ignition, electrostatic discharge insensitivity and low initiation energy applications.

中文翻译：

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包含平面瞬态抑制二极管的新型电爆装置

在这封信中，介绍了一种新颖的、耐静电放电的、基于半导体的电爆炸装置。该装置被称为集成半导体桥（ISCB）芯片，由单晶硅加热元件组成，用于点燃武器中的烟火混合物。两个平面瞬态抑制二极管阵列被整合到芯片中，以防止静电放电事件。ISCB的瞬态抑制二极管阵列特性和放电特性通过容性放电单元进行测试。同时，还使用人体静电放电模型测试了静电放电事件期间 ISCB 的行为。结果表明，ISCB芯片具有体积小、点火快、