GaN-based semiconductors are promising materials for solid-state optoelectronic applications. However, the strong internal electrostatic field (IEF) along the [0001] direction is a serious problem that harms the efficiency of lighting devices based on GaN-based semiconductors due to the quantum confined Stark effect. Here we theoretically predict a method, reducing the dimensions from bulk to two-dimensional (2D) structures, to fundamentally remove the IEF. After thinning the materials to several nanometers, the wurtzite configuration (with strong IEF) spontaneously transform to the haeckelite (4 | 8) configuration (without IEF) due to the more stable neutral surface in the 4 | 8 configuration. Meanwhile, the 4 | 8 configuration maintain optoelectronic properties comparable to or even better than those of the wurtzite configuration. By carefully analyzing the interaction between 2D GaN and different types of substrates (SiC and graphene), we not only provide clear physical insights for experimental results but also address a “thickness-controlled” vdW epitaxy scheme to experimentally realize the 4 | 8 configuration. We believe that the 4 | 8 configuration without IEF is a prospective material for diverse optoelectronic applications. In addition, we propose a point of view in engineering the properties of GaN-based semiconductors.

GaN基半导体是用于固态光电应用的有前途的材料。然而，由于量子限制的斯塔克效应，沿[0001]方向的强内部静电场（IEF）是严重的问题，其损害了基于GaN的半导体的照明装置的效率。在这里，我们从理论上预测一种将体积从体积减小为二维（2D）结构的方法，以从根本上消除IEF。将材料减薄至几纳米后，纤锌矿构型（具有强IEF）会自发转变为方铁矿（4 | 8）构型（无IEF），这是因为4 |中性表面更稳定。8配置。同时，4 | 8种配置可保持与纤锌矿结构相比甚至更高的光电性能。通过仔细分析2D GaN与不同类型的衬底（SiC和石墨烯）之间的相互作用，我们不仅为实验结果提供了清晰的物理见解，而且还提出了一种“厚度受控”的vdW外延方案，以通过实验实现4 | GaN。8配置。我们认为4 | 没有IEF的8配置是用于各种光电应用的前瞻性材料。此外，我们提出了一种基于工程的GaN基半导体特性的观点。我们认为4 | 没有IEF的8配置是用于各种光电应用的前瞻性材料。此外，我们提出了一种基于工程的GaN基半导体特性的观点。我们认为4 | 没有IEF的8配置是用于各种光电应用的前瞻性材料。另外，我们提出了在工程上基于GaN的半导体的特性的观点。