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Luminescence and structure regulation of graphitic carbon nitride by electron rich P ions doping
Journal of Luminescence ( IF 3.6 ) Pub Date : 2020-12-01 , DOI: 10.1016/j.jlumin.2020.117616
Ying Tian , Wenhua Tang , Hui Xiong , Tanghan Chen , Bingpeng Li , Xufeng Jing , Junjie Zhang , Shiqing Xu

Abstract Graphitic carbon nitride (g-C3N4) modified with electron rich P ions was synthesized by directly heating a mixture of melamine and diammonium hydrogenphosphate with various doping concentration. The effect of the doping ion and its concentration on the morphology, structural and optical properties of the samples were investigated in detail. With the doping concentration increasing, a relative red shift and broadening was observed in the luminescence spectra of the doped g-C3N4. Based on a series of structural characterization, it is found that P ions replace part of the C-lattice in the g-C3N4 network and form some P–N bonds. The P–N bonds affect the morphology and electronic structure of g-C3N4. Thus, the changes of luminescence properties could be mainly attributed to the doping-induced electronic redistribution.

中文翻译:

富电子P离子掺杂对石墨氮化碳的发光及结构调控

摘要 通过直接加热不同掺杂浓度的三聚氰胺和磷酸氢二铵的混合物,合成了富电子P离子修饰的石墨氮化碳(g-C3N4)。详细研究了掺杂离子及其浓度对样品形貌、结构和光学性质的影响。随着掺杂浓度的增加,在掺杂的 g-C3N4 的发光光谱中观察到相对红移和展宽。基于一系列的结构表征,发现 P 离子取代了 g-C3N4 网络中的部分 C-晶格并形成了一些 P-N 键。P-N 键影响 g-C3N4 的形态和电子结构。因此,发光特性的变化主要归因于掺杂诱导的电子再分布。
更新日期:2020-12-01
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