The possibility of electrical control of the interlayer exchange interaction in CoFeB/MgO/CoFeB tunnel junctions exhibiting magnetoresistance of ~200% is studied. It is shown that the increase in the applied voltage from 50 mV to 1.25 V leads to a shift of the magnetization curve of the free layer by 10 Oe at a current density of ~10³ A/cm². The discovered effect can be used in the development of energy-efficient random access memory.

中文翻译：

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CoFeB / MgO / CoFeB磁性隧道结中的磁电效应

研究了电控制CoFeB / MgO / CoFeB隧道结中层间交换相互作用的可能性，表现出〜200％的磁阻。结果表明，在〜10 ³ A / cm ²的电流密度下，施加的电压从50 mV增加到1.25 V会导致自由层的磁化曲线偏移10 Oe 。发现的效果可用于节能型随机存取存储器的开发。