Competing dynamics was analyzed for generation, recovery and accumulation of ion irradiation damage using three methods including He-ion channeling backscattering. The in situ tracing of electrical conductance after pulsed 100 keV proton irradiations at 23 °C–92 °C revealed that the subsequent recovery process was a second-order reaction with an activation energy of 0.74 eV in n -type and 0.31 eV in p -type epitaxial layers arising from long-range migration of both Ga and As interstitials. The amorphized depth by pulsed irradiations exhibited that the recovery was suppressed by the incidence of two ions within a lateral separation, which increased from ∼5 to ∼20 nm with the ion mass for 80 keV Ne + , 150 keV Ar + , and 300 keV Kr + ions of an identical projected range, 115 nm. From the comparison with ion-collision simulations, it was concluded that if two collision cascades overlap before the recovery, it enhances interstitial clustering ...

中文翻译：

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离子辐照损伤的恢复和积累导致GaAs中的剂量率依赖性

使用He-离子通道背散射等三种方法分析了竞争动力学对离子辐照损伤的产生，恢复和累积的影响。在23°C–92°C脉冲100 keV质子辐照后，电导率的原位追踪表明，随后的恢复过程是第二级反应，n型活化能为0.74 eV，p-为0.31 eV。 Ga和As间隙物的长距离迁移产生了一种类型的外延层。脉冲辐照的非晶化深度表明，横向分离中的两个离子的入射抑制了恢复，当离子质量为80 keV Ne +，150 keV Ar +和300 keV时，离子从约5nm增加到约20nm。投射范围相同的Kr +离子为115 nm。通过与离子碰撞模拟的比较，