Group ΙΙΙ nitrides are crucial semiconductors used in optoelectronic applications such as light-emitting diodes, but their efficiency is still limited due to some material problems including dislocations, strain, composition fluctuations and optical polarization properties. Nitride nanowire (NW) structures, showing advantages in these aspects, are a possible method to address the shortcomings of bulk materials and improve device performances. Here we investigated the manipulation of polarization characteristics in wurtzite ΙΙΙ-nitride NWs by controlling the diameter and strain using first-principles calculations. The inversion of valence bands between heavy/light hole and crystal-field split-off hole is induced with decreasing the diameter of AlN and InN NWs, which causes the switch of polarization characteristics from transverse-magnetic (TM) mode of bulk AlN (transverse-electric (TE) mode of bulk InN) to TE mode of small-diameter AlN NWs (TM mode of small-diameter InN NWs, i.e...

中文翻译：

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纤锌矿III氮化物纳米线的极化特性操纵，用于线性极化发射

第III族氮化物是光电子应用中使用的至关重要的半导体，例如发光二极管，但是由于一些材料问题，包括位错，应变，成分波动和光偏振特性，其效率仍然受到限制。在这些方面均显示出优势的氮化物纳米线（NW）结构是解决块状材料缺点并改善器件性能的一种可能方法。在这里，我们通过使用第一性原理计算来控制直径和应变，研究了纤锌矿III族氮化物的偏振特性的操纵。随着AlN和InN NWs直径的减小，重/轻孔与晶体场分裂孔之间的价带反转。