Dinaphthothienothiophene (DNTT) has attracted considerable attention as a next-generation material for organic thin-film transistors, replacing the conventional basic material of pentacene. Although the performance of DNTT devices is higher than that of pentacene, and has been reported numerously, a comprehensive understanding of thin-film growth is lacking. In fact, thin-film structures have long been believed to be identical to single-crystal structures. In the present study, the thickness-dependent structural evolution is revealed by means of high-resolution X-ray diffraction. This technique apparently discriminates the thin-film structure from the conventionally known bulk structure. Thus, we have revealed the thin-film phase of DNTT for the first time.

中文翻译：

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高分辨X射线衍射揭示二萘并噻吩并噻吩的隐藏薄膜相

作为用于有机薄膜晶体管的下一代材料，二萘并噻吩并噻吩（DNTT）取代了并五苯的常规基础材料，引起了相当大的关注。尽管DNTT器件的性能高于并五苯，并且已被大量报道，但仍缺乏对薄膜生长的全面了解。实际上，长期以来人们一直认为薄膜结构与单晶结构相同。在本研究中，借助于高分辨率X射线衍射揭示了厚度依赖性的结构演化。显然，该技术将薄膜结构与常规已知的整体结构区分开。因此，我们首次揭示了DNTT的薄膜相。