Abstract The gamma irradiation effect in indium phosphide (InP) heterojunction bipolar transistors (HBTs) is studied in this paper. The direct-current (DC) and alternating-current (AC) characteristics are investigated before and after an irradiation dose of 10 Mrad(Si). The main effects of gamma irradiation for InP HBTs are the following: increase of forward Gummel base current at low bias regime, decrease of common emitter collector current, increase of junction capacitances, and decrease of cutoff frequency. The Keysight model is adopted to describe behaviors of InP HBTs including DC and AC behaviors. The Keysight model parameter values are extracted before and after irradiation, in turn to study the physical mechanisms responsible for irradiation-induced degradation in InP HBTs.

中文翻译：

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是德科技模型研究 InP HBT 的伽马诱导降解效应

摘要 本文研究了磷化铟（InP）异质结双极晶体管（HBT）中的伽马辐射效应。研究了照射剂量为 10 Mrad(Si) 之前和之后的直流 (DC) 和交流 (AC) 特性。伽马辐照对 InP HBT 的主要影响如下：低偏置状态下正向 Gummel 基极电流的增加、共发射极集电极电流的降低、结电容的增加和截止频率的降低。采用 Keysight 模型来描述 InP HBT 的行为，包括 DC 和 AC 行为。在辐照前后提取是德科技模型参数值，进而研究造成 InP HBT 辐照诱导降解的物理机制。