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BixTey thermoelectric thin films sputtered at room temperature onto moving polymer web: effect of gas pressure on materials properties.
Thin Solid Films ( IF 2.1 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.tsf.2020.138311
Xudong Tao , Kening Wan , Bryan W. Stuart , Emiliano Bilotti , Hazel E. Assender

Abstract Bismuth telluride was deposited onto a dynamic (25 m min−1) polyethylene terephthalate substrate at room temperature using direct current magnetron sputtering in preparation for roll-to-roll manufacture of flexible, low dimensional thermoelectric generators. This study explored the effect of sputtering pressure ranging from 0.03 to 0.6 Pa by adjusting argon flow rate from 50 to 500 sccm. Decreasing argon pressure from 0.6 to 0.03 Pa led to a more stoichiometric target-to-substrate atomic transfer. The coatings, deposited from a Te:Bi = 1.5 atomic ratio target, varied in composition ratio from 1.9 to 3.2, attributed to an obstructive phenomenon of sputtered Bi atoms during transport through the plasma region, under a higher working pressure. In addition, films grown under a lower pressure had wider and flatter grains (the aspect ratio of island width/height decreased from 40 (±1) at 50 sccm to 10 (±1) at 500 sccm for a ~80-nm coating), as indicated by images in atomic force microscopy. Electrical resistivity increased with pressure (0.9 ± 0.01 to 8.1 ± 0.2 mΩ•cm in a ~80-nm coating) due to a stronger carrier scattering mechanism and variations in the film composition and band gap. Seebeck coefficient increased with pressure (49.7 ± 0.9 to 84.0 ± 0.5 µV/K) attributable to an increased band gap and a possible energy barrier mechanism at grain boundaries leading to a carrier filtering effect. Power factor of the thermoelectric film was enhanced by decreasing pressure until the argon flow rate was below 250 sccm. The maximum power factor of the Bi-Te thin film achieved was 4.1 (±0.1) × 10−4 W/mK2 under 0.055 (±0.004) Pa of argon for a ~55 nm coating, which was achieved here by a real industrial-scale manufacturing process.

中文翻译:

BixTey 热电薄膜在室温下溅射到移动的聚合物网上:气压对材料特性的影响。

摘要 碲化铋在室温下使用直流磁控溅射沉积在动态 (25 m min-1) 聚对苯二甲酸乙二醇酯基板上,为柔性、低维热电发电机的卷对卷制造做准备。本研究通过将氩气流速从 50 调整到 500 sccm,探讨了溅射压力在 0.03 到 0.6 Pa 范围内的影响。将氩气压力从 0.6 Pa 降低到 0.03 Pa 会导致更化学计量的目标到基材的原子转移。由 Te:Bi = 1.5 原子比靶沉积的涂层,成分比从 1.9 到 3.2 不等,这归因于在较高工作压力下传输通过等离子体区域期间溅射 Bi 原子的阻碍现象。此外,如图所示,在较低压力下生长的薄膜具有更宽更平坦的晶粒(岛宽/高度的纵横比从 50 sccm 时的 40 (±1) 降至 500 sccm 时的 10 (±1)),如图所示通过原子力显微镜中的图像。由于更强的载流子散射机制以及薄膜成分和带隙的变化,电阻率随压力增加(0.9 ± 0.01 至 8.1 ± 0.2 mΩ•cm,在 ~80 nm 涂层中)。塞贝克系数随压力增加(49.7 ± 0.9 至 84.0 ± 0.5 µV/K)而增加,这归因于带隙增加和晶界处可能的能量势垒机制导致载流子过滤效应。通过降低压力直到氩气流速低于 250 sccm 来提高热电膜的功率因数。获得的 Bi-Te 薄膜的最大功率因数为 4.1 (±0.
更新日期:2020-10-01
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