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Low Background Doping in AlInN Grown on GaN via Metalorganic Vapor Phase Epitaxy
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2020-10-01 , DOI: 10.1016/j.jcrysgro.2020.125847
Damir Borovac , Wei Sun , Matthew R. Peart , Renbo Song , Jonathan J. Wierer , Nelson Tansu

Abstract Nearly lattice-matched and unintentionally doped AlInN films with low background doping grown via metalorganic vapor phase epitaxy on GaN/sapphire are investigated. The lattice-matched condition is verified with x-ray diffraction (XRD), and the films exhibit typical morphological characteristics for AlInN. The optical constants (nr & k) and thicknesses of the AlInN films are determined via spectroscopic ellipsometry, finding an nr ~ 2.2 at 500 nm and a bandgap of ~4.366 eV. Temperature-dependent Hall measurements in the Van der Pauw configuration are performed for temperatures from 80 K up to 350 K, and a low background doping concentration (n ~ 3 × 1017 cm−3) and high electron mobility (μe ~ 320 cm2/V∙s) are found at room temperature. Simulations are performed to determine the influence of the 2-D electron gas (2DEG) caused by polarization fields from the GaN/AlInN interface and validate the Hall measurements. Thus, this work shows the potential of achieving high-quality AlInN films with low background doping densities for use in power electronic devices and deep-ultraviolet light-emitting diodes.

中文翻译:

通过金属有机气相外延在 GaN 上生长的 AlInN 中的低背景掺杂

摘要 研究了通过金属有机气相外延在 GaN/蓝宝石上生长的具有低背景掺杂的几乎晶格匹配和无意掺杂的 AlInN 薄膜。X 射线衍射 (XRD) 验证了晶格匹配条件,并且薄膜表现出典型的 AlInN 形态特征。AlInN 薄膜的光学常数 (nr 和 k) 和厚度通过光谱椭偏法确定,在 500 nm 处发现 nr ~ 2.2 和 ~4.366 eV 的带隙。Van der Pauw 配置中的温度相关霍尔测量适用于 80 K 至 350 K、低背景掺杂浓度 (n ~ 3 × 1017 cm−3) 和高电子迁移率 (μe ~ 320 cm2/V) ∙s) 是在室温下发现的。执行模拟以确定由来自 GaN/AlInN 界面的极化场引起的二维电子气 (2DEG) 的影响并验证霍尔测量。因此,这项工作显示了获得用于电力电子设备和深紫外发光二极管的具有低背景掺杂密度的高质量 AlInN 薄膜的潜力。
更新日期:2020-10-01
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