In this paper, with Sentaurus TCAD simulation, the trench/planar MOSFET (TPMOS) shows a much lower electric field in gate oxide and a smaller gate charge than the traditional trench MOSFET (TMOS) and commercial double trench MOSFET (DTMOS). Besides, compared with DTMOS, the TPMOS also has a smaller specific on-resistance. These advantages make the TPMOS more suitable for being integrated with a Schottky barrier diode (SBD) to reduce both conduction loss and switching loss. Therefore, the trench/planar 4 H-SiC MOSFET integrated with SBD (TPSBD) is firstly proposed and studied. For the TPSBD, the static simulation results show that the maximum reverse current without the body diode turning on is 1320 A cm −2 in the third quadrant. In the double pulse test with a load current of 1000 A cm −2 , the body diode of the TPSBD is successfully suppressed. However, the body diodes of the other three MOSFETs turn on and contribute 75% of the freewheeling currents, even th...

中文翻译：

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集成了SBD（TPSBD）的沟槽/平面SiC MOSFET，可实现低反向恢复电荷和低开关损耗

在本文中，通过Sentaurus TCAD仿真，与传统的沟槽MOSFET（TMOS）和商用双沟槽MOSFET（DTMOS）相比，沟槽/平面MOSFET（TPMOS）的栅氧化层电场更低，栅电荷更小。此外，与DTMOS相比，TPMOS的导通电阻也较小。这些优点使TPMOS更适合与肖特基势垒二极管（SBD）集成在一起，以减少传导损耗和开关损耗。因此，首先提出并研究了集成有SBD（TPSBD）的沟槽/平面4 H-SiC MOSFET。对于TPSBD，静态仿真结果显示，在未打开体二极管的情况下，第三象限中的最大反向电流为1320 A cm -2。在负载电流为1000 A cm -2的双脉冲测试中，成功抑制了TPSBD的体二极管。