Multilayer ceramic capacitors were prepared with BaTiO3-based ceramics of different grain sizes (150–500 nm), having appropriate dielectric properties and high-temperature stability. The grain size effect on the dielectric properties and insulation resistivity of fine-grained BaTiO3 ceramics at room temperature and high temperatures under electric fields were investigated. The reduction in particle size has a strong effect on DC-bias characteristics and withstanding voltage characteristics per unit thickness. BaTiO3 ceramic capacitor with smaller grains had higher reliability under the DC bias and higher withstanding voltage per unit thickness due to the shell with para-electricity. The highly accelerated lifetime test showed that the insulation resistance with smaller particle size exhibited one order higher as the voltage increases at higher temperatures and the samples with a size of 500 nm had a sharp drop in insulation resistance at 200 V. Small particles (150, 250 nm) have a smaller product of insulation resistance and capacity than larger particles (500 nm). But, the withstanding voltage per unit thickness of the small particles (150, 250 nm) was 82, 71 V/μm, respectively, which was greater than 58 V/μm of the larger particles (500 nm). This is thought to be an effect of suppressing the movement of defects in the smaller particles because small grains have many grain boundaries.

中文翻译：

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多层陶瓷电容器的电气特性取决于 BaTiO3 粒径

多层陶瓷电容器是用不同晶粒尺寸（150-500 nm）的 BaTiO3 基陶瓷制备的，具有适当的介电性能和高温稳定性。研究了晶粒尺寸对细晶BaTiO3陶瓷在室温和高温电场下介电性能和绝缘电阻率的影响。粒径的减小对每单位厚度的直流偏置特性和耐压特性有很大影响。晶粒较小的 BaTiO3 陶瓷电容器在直流偏置下具有更高的可靠性，由于外壳具有顺电性，因此具有更高的单位厚度耐受电压。高加速寿命试验表明，在较高温度下，随着电压的增加，较小粒径的绝缘电阻表现出高一个数量级，而粒径为 500 nm 的样品在 200 V 时绝缘电阻急剧下降。 小颗粒（150， 250 nm) 具有比较大颗粒 (500 nm) 更小的绝缘电阻和容量乘积。但是，小颗粒（150、250 nm）的单位厚度耐受电压分别为82、71 V/μm，高于较大颗粒（500 nm）的58 V/μm。这被认为是抑制小颗粒中缺陷移动的效果，因为小晶粒具有许多晶界。250 nm) 具有比较大颗粒 (500 nm) 更小的绝缘电阻和容量乘积。但是，小颗粒（150、250 nm）的单位厚度耐受电压分别为82、71 V/μm，高于较大颗粒（500 nm）的58 V/μm。这被认为是抑制小颗粒中缺陷移动的效果，因为小晶粒具有许多晶界。250 nm) 具有比较大颗粒 (500 nm) 更小的绝缘电阻和容量乘积。但是，小颗粒（150、250 nm）的单位厚度耐受电压分别为82、71 V/μm，高于较大颗粒（500 nm）的58 V/μm。这被认为是抑制小颗粒中缺陷移动的效果，因为小晶粒具有许多晶界。