We have newly developed mist CVD-derived Hf1−x Zr x O2 films and investigated their physical properties and basic electrical properties for application to ferroelectric analog memory device such as synaptic device for neuromorphic system. It is observed that the films consisted of microcrystal grain including ferroelectric orthorhombic phase by AFM and GIXRD measurements. Both HfO2 and ZrO2 film with 20 nm thickness showed good fatigue endurance against 109 counts of imposed pulse cycling, where some wakeup phenomena were observed. For a range of electric field (up to 1.5 MV cm−1) as memory-writing input with condition of minor ferroelectric hysteresis loop, a linear relationship between the input and resultant polarization at zero electric field, P(E = 0), was obtained. Finally, it is suggested that those films of HfO2, Hf0.55Zr0.45O2 and ZrO2 are basically applicable for the ferroelectric analog memory device. Further investigation is needed in view of degradation against the input electric field and imposed fatigue pulse.

中文翻译：

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雾状 CVD 衍生铁电 Hf1−x Zr x O2 薄膜的初步研究，具有适用于非易失性模拟存储器的可能性

我们新开发了雾状 CVD 衍生的 Hf1-x Zr x O2 薄膜，并研究了它们的物理特性和基本电特性，以应用于铁电模拟存储设备，例如神经形态系统的突触设备。通过AFM和GIXRD测量观察到薄膜由包括铁电正交相的微晶粒组成。厚度为 20 nm 的 HfO2 和 ZrO2 薄膜均显示出良好的耐疲劳性，可抵抗 109 次强加脉冲循环，观察到一些唤醒现象。对于一定范围的电场（高达 1.5 MV cm−1）作为具有较小铁电磁滞回线条件的存储器写入输入，在零电场 P(E = 0) 下，输入和合成极化之间的线性关系为获得。最后，建议那些薄膜的 HfO2、Hf0.55Zr0。45O2和ZrO2基本上适用于铁电模拟存储器件。鉴于输入电场和施加的疲劳脉冲的退化，需要进一步研究。