We present a semi‐analytical model for the calculation of the current through and the recombination in carrier‐selective junctions consisting of a poly‐Si/SiO_x/c‐Si layer stack. We calculate the recombination parameter J₀ and the contact resistance ρ_C after solving the band‐bending‐problem on both sides of the interfacial oxide. Comparisons with finite‐element simulations show that the current calculation is reliable at all bias conditions except for inversion and that current through pinholes is resolved adequately in the model. The model allows a coherent description of lifetime‐, current‐voltage‐ and capacitance‐voltage measurements performed on a sample with dominant tunneling. We use our model to investigate the influence of oxide thickness and pinhole density on J₀ and ρ_C of our state‐of‐the‐art poly‐silicon‐on‐oxide (POLO) junctions and demonstrate its usefulness for the optimization of poly‐Si based junctions.

中文翻译：

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模拟多晶硅结的复合和接触电阻

我们提供了一个半分析模型，用于计算由多晶硅/ SiO _x / c-Si叠层组成的载流子选择结中的电流和复合。我们计算了重组参数Ĵ ₀和接触电阻ρ _Ç解决了界面氧化物两侧的带弯曲问题之后。与有限元模拟的比较表明，电流计算在除反演以外的所有偏置条件下都是可靠的，并且通过针孔的电流在模型中得到了充分解决。该模型可以对在具有主要隧穿的样品上进行的寿命，电流电压和电容电压测量进行连贯的描述。我们使用我们的模型来研究氧化物厚度对影响和针孔密度Ĵ ₀和ρ _Ç我们国家的最先进的聚硅-氧化物（POLO）结和示范聚的优化它的用处硅基结。