The resistive switching memory behavior activated by simulated solar light and swift heavy ion irradiation in poly (3-octylthiophene)-zinc oxide hybrid devices are reported. The current-voltage characteristics show the appearance of a remarkable hysteresis in reverse bias and a considerable in a forward bias upon illumination by simulated solar light results in memory behavior. Ion irradiation exhibits strong enhancement of the memory behavior under both dark and light illuminations. Thus, the memory response is activated and/or enhanced upon illumination by light and irradiation along with the cyclic endurance of the devices. This is attributed due to the formation of well built-in conducting filament pathways through the trapping of injected and photo-generated charges via irradiation-induced electrically active defect and trap states and well explained by a schematic energy band diagram. The defect density induced upon ion irradiation works as a dominant factor and thus the tailoring of the interfacial properties of the hybrid devices leads to the strong strengthening of memory formations. Thus, the hybrid devices can be activated and/or enhanced by light and irradiation for potential fast resistive switching memory applications.

据报道，在聚（3-辛基噻吩）-氧化锌混合器件中，模拟太阳光和快速重离子辐照激活了电阻式开关记忆行为。电流-电压特性在反向偏置下表现出明显的滞后现象，而在模拟太阳光照射下，在正向偏置下表现出相当大的滞后现象，从而导致了存储行为。离子辐照在暗光和亮光下均能显着增强记忆行为。因此，在通过光和照射进行照明时以及随着设备的循环耐久性，激活和/或增强了存储响应。这归因于通过辐射诱导的电活性缺陷和俘获状态俘获注入的电荷和光生电荷而形成的内置良好的导电灯丝通路，并通过示意性能带图很好地解释了这一点。离子辐照引起的缺陷密度起着主导作用，因此，对混合器件的界面特性进行定制可以大大增强存储结构。因此，可以通过光和辐照来激活和/或增强混合装置，以用于潜在的快速电阻切换存储应用。离子辐照引起的缺陷密度起着主导作用，因此，对混合器件的界面特性进行定制可以大大增强存储结构。因此，可以通过光和辐照来激活和/或增强混合装置，以用于潜在的快速电阻切换存储应用。离子辐照引起的缺陷密度起着主导作用，因此，对混合器件的界面特性进行定制可以大大增强存储结构。因此，可以通过光和辐照来激活和/或增强混合装置，以用于潜在的快速电阻切换存储应用。