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Influence of Al content on the optical band-gap enhancement and lattice structure of (Ga1-xAlx)2O3 single crystal
Optical Materials ( IF 3.9 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.optmat.2020.110351
Indranil Bhaumik , M. Soharab , R. Bhatt , A. Saxena , S. Sah , A.K. Karnal

Abstract Single crystals of undoped, 4.8, 9.3 and 14.1 at.% Al substituted β-Ga2O3 have been grown by optical floating zone technique. It has been observed that it is not possible to grow good quality single crystal with higher Al content unlike the thin film grown by pulsed laser deposition [Appl. Phys. Lett. 105 (2014) 162107]. It has been found that the incorporation of Al in β-Ga2O3 has resulted a shrinkage in the lattice parameters and volume. This leads to a systematic increase in the band gap of the material and broadens the transmission window in the deep UV range up to 5.08 eV for 14.1 at.% of Al substitution in the lattice.

中文翻译:

Al含量对(Ga1-xAlx)2O3单晶光学带隙增强和晶格结构的影响

摘要 未掺杂、4.8、9.3 和 14.1 at.% Al 取代的 β-Ga2O3 单晶已通过光浮区技术生长。已经观察到,与通过脉冲激光沉积生长的薄膜不同,不可能生长出具有更高铝含量的优质单晶 [Appl. 物理。莱特。105 (2014) 162107]。已经发现,在β-Ga2O3 中掺入Al 导致晶格参数和体积收缩。这导致材料带隙的系统性增加,并将深紫外范围内的透射窗口加宽至 5.08 eV,用于晶格中 14.1 at.% 的 Al 替代。
更新日期:2020-11-01
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