Abstract

The sources of heavy cluster ions (Au, Bi) used in modern mass spectrometers suggest that the emission of secondary ions is predominantly performed in the thermal spike mode, unlike the previous generation of spectrometers operating with atomic cesium ions and oxygen ions. Here, we verify this assumption using the example of the emission of 11 implanted elements from GaAs upon sputtering by \({\text{Bi}}_{{\text{3}}}^{ + }\) bismuth ions with an energy of 30 keV. The obtained data on the relative sensitivity factors are analyzed using semiconductor-band theory and the assumption of melt production in the case of the formation of thermal spikes.

中文翻译：

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“热尖峰”模式下二次离子排放的研究

摘要

现代质谱仪中使用的重簇离子（Au，Bi）来源表明，次级离子的发射主要在热尖峰模式下进行，这与上一代使用原子铯离子和氧离子的质谱仪不同。在此，我们以铋离子（\（{\ text {Bi}} _ {{\ text {3}}} ^ {+} \）溅射时从GaAs发射11种注入元素的示例为例，验证了这一假设。能量为30 keV。使用半导体能带理论和假设在形成热尖峰的情况下产生熔体的假设来分析获得的相对灵敏度因子数据。