We examine the impact of negative bias temperature (NBT) stress on the fluctuations in and for deeply scaled pMOSFETs and find that the relative high NBT stress triggers -RTN and -step. Through the analysis of the field dependence of emission constant and the carrier separation measurement, it is found that under the relative high NBT stress some traps keep charged state for very long time, as observing step-like behaviors in , while other traps emit charged holes to the gate side through TAT process, which originate both -step and ID-RTN.

中文翻译：

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深度缩放 pMOSFET 中负偏置温度应力下空穴发射路径的转变

我们研究了负偏压温度 (NBT) 应力对深度缩放 pMOSFET 中的波动的影响，并发现相对较高的 NBT 应力会触发 -RTN 和 -step。通过发射常数场相关性分析和载流子分离测量发现，在相对较高的NBT应力下，一些陷阱保持带电状态很长时间，在 中观察到阶梯状行为，而其他陷阱则发射带电空穴通过 TAT 过程到达门侧，该过程起源于 -step 和 ID-RTN。