In article number 2000044, M. Nicolai L. Lorenz‐Meyer and co‐workers propose a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the physical conditions of the process. Experiments are conducted to identify the model parameters and the physical consistency is verified using simulation studies.

中文翻译：

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硅晶体生长：颗粒坩埚中硅晶体生长的集总参数模型（晶体研究与技术8/2020）

M. Nicolai L. Lorenz-Meyer和他的同事在文章2000044中提出了一种新颖的硅颗粒坩埚（SiGC）方法的集总参数模型，这是该过程的未来基于模型的控制系统的基础。该模型是根据过程的物理条件进行分析得出的。进行实验以识别模型参数，并使用模拟研究验证了物理一致性。