Abstract High hydrogen content (CH) intrinsic amorphous silicon (a-Si:H) buffer layers were deposited on both sides of crystalline silicon wafers using plasma-enhanced chemical vapor deposition technique, which significantly improved surface passivation as well as conversion efficiency of the silicon heterojunction solar cells. Properties of the buffer layer and impact on the device performance were investigated. High resolution transmission electron microscope characterization shows that no obvious epitaxial growth occurred at the interface as long as a-Si:H buffer layer was introduced between c-Si and bulk intrinsic layer. Further study indicates that minority carrier lifetime of the device is related to hydrogen content of the buffer layer, reaching highest value up to 2050 ms at CH of 33%. These findings evidently confirmed that suppression of epitaxial growth and thus improved passivation were realized by using high-hydrogen-content a-Si:H buffer layer, based on which a high efficiency solar cell was prepared with large area.

中文翻译：

---

通过应用高氢含量非晶硅作为无外延缓冲层实现高效硅异质结太阳能电池

摘要 采用等离子体增强化学气相沉积技术在晶体硅片的两面沉积高氢（CH）本征非晶硅（a-Si:H）缓冲层，显着提高了硅的表面钝化和转换效率。异质结太阳能电池。研究了缓冲层的特性和对器件性能的影响。高分辨率透射电子显微镜表征表明，只要在 c-Si 和体本征层之间引入 a-Si:H 缓冲层，界面处就不会发生明显的外延生长。进一步研究表明，器件的少数载流子寿命与缓冲层的氢含量有关，在 CH 为 33% 时达到最高值，可达 2050 ms。