Abstract The survivability of CdZnTe gamma ray detectors, when exposed to energetic particles in a radiation environment, is a key issue for their application. Nevertheless, very little attention has been paid to the irradiation particle energy influences on CdZnTe detector performance. The effects of 3 MeV and 2.08 GeV Kr ion irradiation at fluences of 1 × 1012 ions/cm2 on CdZnTe detector performance are investigated. Variations in performance were determined by comparing pre- and post-irradiation detector current-voltage (I–V) curves and the measured energy spectrum of a 59.5 keV gamma ray source, 241Am. Monte-Carlo simulations of the irradiation process were performed using SRIM software to help explain the observed changes in detector performance. Thermally stimulated current measurements were used to reveal crystal defects newly introduced by the Kr ion irradiation. The 3 MeV Kr ion principally losses its energy in the CdZnTe detector due to nuclear collisions and therefore creates more damage than the 2.08 Kr ion irradiation.

中文翻译：

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3 MeV和2.08 GeV Kr离子辐照对CdZnTe探测器的辐射损伤效应研究

摘要 CdZnTe 伽马射线探测器在辐射环境中暴露于高能粒子时的生存能力是其应用的关键问题。然而，很少有人关注辐射粒子能量对 CdZnTe 探测器性能的影响。研究了 3 MeV 和 2.08 GeV Kr 离子辐照通量为 1 × 1012 离子/cm2 对 CdZnTe 探测器性能的影响。通过比较辐照前和辐照后探测器的电流-电压 (I-V) 曲线和 59.5 keV 伽马射线源 241Am 的测量能谱，确定了性能的变化。使用 SRIM 软件对辐照过程进行蒙特卡罗模拟，以帮助解释观察到的探测器性能变化。热刺激电流测量用于揭示由 Kr 离子辐射新引入的晶体缺陷。由于核碰撞，3 MeV Kr 离子主要在 CdZnTe 检测器中损失其能量，因此比 2.08 Kr 离子辐射造成更大的损害。