Abstract This paper studied the effect of total ionizing dose (TID) radiation on 10 V high-voltage n-type metal-oxide-semiconductor (HVNMOS) devices. The study was conducted on two devices with P+ ion-implantation for radiation-hardening. Both devices were geared towards embedded applications, and ions were implanted into them through P+ ring and P+ sub implantation methods, separately. Leakage channels induced by TID radiation were analyzed to identify key leakage paths. Gate modulation effects, caused by P+ implantation in HVNMOS devices, were studied through gate voltage and junction voltage from drain/source (D/S) to substrate (B). It was uncovered that P+ ring ion implantation was most suitable for radiation-hardening in HVNMOS devices with TID irradiation of over 150 K rad (Si).

中文翻译：

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TID 辐射对 P+ 离子注入 HVNMOS 器件的影响

摘要 本文研究了总电离剂量 (TID) 辐射对 10 V 高压 n 型金属氧化物半导体 (HVNMOS) 器件的影响。该研究是在两个具有 P+ 离子注入以进行辐射硬化的设备上进行的。两种器件均面向嵌入式应用，分别通过 P+ 环和 P+ 子注入方法将离子注入其中。分析了 TID 辐射引起的泄漏通道，以确定关键的泄漏路径。通过栅极电压和从漏极/源极 (D/S) 到衬底 (B) 的结电压研究了由 HVNMOS 器件中的 P+ 注入引起的栅极调制效应。发现 P+ 环离子注入最适合于 HVNMOS 器件中的辐射硬化，TID 辐射超过 150 K rad (Si)。