Abstract The mixed-valence compounds In5S5Br, In5S3Se2Br, In5SSe4Br, and In5Se5Br reveal interesting thermoelectric properties. As the selenium content in the structure of In5S5Br increases, the Seebeck potential increases. In5S5Br exhibits low Seebeck potentials within the studied range (ΔT = 0–80 K) and a maximum value of 0.34 mV for ΔT = 80 K. It behaves as a p-type semiconductor. The substitution of two sulphur species by selenium, as in In5S3Se2Br, shows n-type conductivity and approx.−16.00 mV for the same ΔT. Further substitutions of sulphur in the structure maintain the n-type conductivity and increase dramatically the Seebeck potential to -225.26 mV (ΔT = 80 K). Repeating cycles of Seebeck potential variation over time for In5Se5Br and In5SSe4Br, show differences in their potentials, shape of maxima as well as in their recovery time. Electrical conductivities from 0.3 pS for In5S5Br up to 13 pS for In5Se5Br, strongly influence their thermoelectricity.

中文翻译：

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混合价无机固体化合物 - In5S5Br 中的热电性能通过定向相互硫属化物取代调节

摘要 混合价化合物 In5S5Br、In5S3Se2Br、In5SSe4Br 和 In5Se5Br 显示出有趣的热电特性。随着 In5S5Br 结构中硒含量的增加，塞贝克电位增加。In5S5Br 在研究范围内 (ΔT = 0–80 K) 表现出低塞贝克电位，ΔT = 80 K 时的最大值为 0.34 mV。它表现为 p 型半导体。用硒替代两种硫物质，如 In5S3Se2Br，在相同的 ΔT 下显示出 n 型导电性和大约 -16.00 mV。结构中硫的进一步取代保持了 n 型导电性，并将塞贝克电位显着增加至 -225.26 mV (ΔT = 80 K)。In5Se5Br 和 In5SSe4Br 的 Seebeck 电位随时间变化的重复循环显示了它们的电位、最大值形状以及恢复时间的差异。