Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO 2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 µ m −2 on the surrounding silicon oxide (SiO 2 ). The initial growth of Ge NWs starting from Si–Au droplets with Si x Ge 1−x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within 〈110〉 directions on the substrate and NWs were mainly bounded by two 55° inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements.

中文翻译：

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纳米结构Si（001）/ SiO 2衬底上锗纳米线的面内生长

使用金（Au）作为溶剂，通过分子束外延在纳米结构的Si（001）/ SiO 2衬底上平面内生长锗（Ge）纳米线（NWs）。通过在周围的氧化硅（SiO 2）上具有小于0.25 µm -2的金核密度的硅（Si）尖端上的金滴的矩形阵列，可以实现定点选择性NW生长。从热力学的角度讨论了从Si-Au液滴开始的Ge NWs的初始生长，其中Si x Ge 1-x由三元合金成核。面内NW伸长发生在基板上的<110>方向上，并且NW主要由两个55°倾斜的111面和一个不太明显的平面（001）顶面界定。从X射线衍射测量的二维倒数空间图观察到了Ge NW的完全弛豫的晶格。