Domain-wall memory (DWM), an extension to spin transfer torque-magnetic random access memory (STT-MRAM), stores multiple bits, each bit in an individual domain within a nanowire. The access mechanism of a DWM is carried out with the help of an access point orthogonal to the nanowire, similar to a conventional magneto-tunnel junction (MTJ) of STT-MRAM. In this context, the MTJ free layer is one of the domains of the nanowire. Prior to an access, the desired bit is brought under the access point by shifting, and then its spin orientation is detected by a traditional sensing circuit or overwritten with a write current. However, the nanowire can also be viewed as a multi-level cell (MLC)-like device when tested with an end-to-end current. Based on this observation, we devised a novel transverse read (TR) technique to detect the number of ‘1's stored in a DWM without shifting any domains. TR is non-destructive and requires ultra-low power insomuch as the TR current is small compared to the shifting current. The TR has interesting applications in DWM such as a neuron in a neuromorphic engine, a multi-bit digital storage device, or as a fault tolerance tool for shifting reliability in DWM memories. In this work, we experimentally demonstrate the feasibility of TR in both perpendicular and in-plane magnetic anisotropy nanowires and determine the critical requirements of successful TR operation.

中文翻译：

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一种用于畴壁“赛道”记忆的新型横向读取技术

畴壁存储器 (DWM) 是自旋转移矩磁随机存取存储器 (STT-MRAM) 的扩展，存储多个位，每个位位于纳米线内的单个域中。DWM 的访问机制是在与纳米线正交的访问点的帮助下执行的，类似于 STT-MRAM 的传统磁隧道结 (MTJ)。在这种情况下，无 MTJ 层是纳米线的域之一。在访问之前，通过移位将所需位置于访问点下方，然后通过传统感测电路检测其自旋方向或用写电流覆盖。然而，当使用端到端电流进行测试时，纳米线也可以被视为类似多级单元 (MLC) 的设备。基于这一观察，我们设计了一种新颖的横向读取 (TR) 技术来检测“1”的数量 s 存储在 DWM 中，无需移动任何域。TR 是非破坏性的并且需要超低功率，因为​​与移位电流相比，TR 电流很小。TR 在 DWM 中具有有趣的应用，例如神经形态引擎中的神经元、多位数字存储设备，或作为在 DWM 存储器中转移可靠性的容错工具。在这项工作中，我们通过实验证明了 TR 在垂直和面内磁各向异性纳米线中的可行性，并确定了成功 TR 操作的关键要求。或作为一种容错工具，用于转移 DWM 存储器的可靠性。在这项工作中，我们通过实验证明了 TR 在垂直和面内磁各向异性纳米线中的可行性，并确定了成功 TR 操作的关键要求。或作为一种容错工具，用于转移 DWM 存储器的可靠性。在这项工作中，我们通过实验证明了 TR 在垂直和面内磁各向异性纳米线中的可行性，并确定了成功 TR 操作的关键要求。