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A 3D rotation based Through-Silicon Via Redundancy Architecture for Clustering Faults
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ( IF 2.9 ) Pub Date : 2020-09-01 , DOI: 10.1109/tcad.2019.2927485
Minho Cheong , Ingeol Lee , Sungho Kang

Three-dimensional integrated circuits (3-D ICs), which feature many benefits, such as high bandwidth and a high degree of integration, have recently received considerable attention from the semiconductor industry. However, these chips feature through-silicon vias (TSVs), which vertically connect multiple dies, and these TSVs may fail, resulting in a decreased yield. Unfortunately, previously proposed methods to repair TSVs cannot handle certain failure patterns. For example, existing techniques cannot repair clustered TSV faults, which commonly occur in practice. Furthermore, the number of signal TSVs typically determines the number of redundant TSVs, which may result in wasteful and redundant TSVs. In this paper, a new TSV repair scheme is proposed that replaces defective TSVs with redundant TSVs by utilizing the architecture of a cube, which can replace any face with any of the other faces. Both signal TSVs and redundant TSVs are placed in the face of cube, so any faulted TSVs can be replaced with redundant TSVs. The experimental results indicate that the new method guarantees 100% coverage with any number of signal TSVs and redundant TSVs.

中文翻译:

用于集群故障的基于 3D 旋转的硅通孔冗余架构

具有高带宽和高集成度等诸多优点的三维集成电路(3-D IC)最近受到了半导体行业的广泛关注。然而,这些芯片具有硅通孔 (TSV),可垂直连接多个管芯,这些 TSV 可能会失效,从而导致良率下降。不幸的是,先前提出的修复 TSV 的方法无法处理某些故障模式。例如,现有技术无法修复实践中经常发生的集群TSV故障。此外,信号TSV的数量通常决定了冗余TSV的数量,这可能导致浪费和冗余的TSV。在本文中,提出了一种新的 TSV 修复方案,利用立方体的架构用冗余 TSV 替换有缺陷的 TSV,它可以用任何其他面替换任何面。信号 TSV 和冗余 TSV 都放置在立方体的表面,因此任何有故障的 TSV 都可以用冗余 TSV 替换。实验结果表明,新方法可以保证 100% 覆盖任意数量的信号 TSV 和冗余 TSV。
更新日期:2020-09-01
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