Passivating contacts for silicon solar cells can be fabricated by depositing a layer of intrinsic amorphous silicon (a-Si) by the plasma-enhanced chemical vapor deposition (PECVD) onto an oxidized silicon wafer, followed by a thermal POCl3 diffusion process. This article describes the influence of the main PECVD parameters, power and pressure, on the electrical performance of such phosphorus-doped polysilicon (doped-Si/SiOx) passivating contacts. We characterize their properties in terms of the passivation quality and carrier selectivity for different PECVD powers and pressures. The deposition power settings from 350 to 800 W are tried, the highest iVoc value of 721 mV is achieved at a power of 500 W. The higher deposition powers (≥650 W) lead to blistering issues and possible interface damage, while a lower deposition power (350 W) leads to incomplete decomposition of the precursor gas, resulting in a lower passivation quality. Meanwhile, the power has a marginal impact on the contact resistivity. On the other hand, the deposition pressure has only a slight impact on the passivation quality, while significant changes are observed on the contact resistivity. A lower pressure (0.1 mbar) leads to a higher contact resistivity, while the low and consistent contact resistivity values of 5.8 mΩ·cm2 are obtained at the pressures above 0.2 mbar.

中文翻译：

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PECVD沉积功率和压力对掺磷多晶硅钝化触点的影响

通过等离子体增强化学气相沉积 (PECVD) 在氧化硅晶片上沉积一层本征非晶硅 (a-Si)，然后进行热 POCl3 扩散工艺，可以制造硅太阳能电池的钝化触点。本文介绍了主要的 PECVD 参数、功率和压力对此类磷掺杂多晶硅（掺杂硅/SiOx）钝化触点的电气性能的影响。我们根据钝化质量和不同 PECVD 功率和压力的载流子选择性来表征它们的特性。尝试了 350 到 800 W 的沉积功率设置，在 500 W 的功率下实现了 721 mV 的最高 iVoc 值。更高的沉积功率 (≥650 W) 会导致起泡问题和可能的界面损坏，而较低的沉积功率 (350 W) 会导致前体气体分解不完全，从而导致钝化质量较低。同时，功率对接触电阻的影响很小。另一方面，沉积压力对钝化质量的影响很小，而接触电阻率却发生了显着变化。较低的压力 (0.1 mbar) 导致较高的接触电阻率，而在高于 0.2 mbar 的压力下获得 5.8 mΩ·cm2 的低且一致的接触电阻率值。同时观察到接触电阻率发生显着变化。较低的压力 (0.1 mbar) 导致较高的接触电阻率，而在高于 0.2 mbar 的压力下获得 5.8 mΩ·cm2 的低且一致的接触电阻率值。同时观察到接触电阻率发生显着变化。较低的压力 (0.1 mbar) 导致较高的接触电阻率，而在高于 0.2 mbar 的压力下获得 5.8 mΩ·cm2 的低且一致的接触电阻率值。