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A Correlative Study of Film Lifetime, Hydrogen Content, and Surface Passivation Quality of Amorphous Silicon Films on Silicon Wafers
IEEE Journal of Photovoltaics ( IF 3 ) Pub Date : 2020-09-01 , DOI: 10.1109/jphotov.2020.3009146
Huiting Wu , Hieu T. Nguyen , Lachlan Black , Anyao Liu , Rong Liu , Wenhao Chen , Di Kang , Wenjie Yang , Daniel Macdonald

We examine correlations between the recombination lifetime and hydrogen content of hydrogenated amorphous silicon films (a-Si:H) and the surface passivation afforded by such films when deposited on crystalline silicon wafers, during annealing at 350–500 °C. Our results show that, as the annealing duration increases, both the a-Si:H recombination lifetime and the surface recombination velocity evolve at a similar rate to the hydrogen concentration. This suggests that the loss of hydrogen during annealing is the direct cause of the reduction in the a-Si:H film lifetime, and that the loss of hydrogen occurs both at the a-Si:H/c-Si interface as well as in the bulk of a-Si:H film. We calculated the activation energy of the surface depassivation reaction during annealing to be 0.62 ± 0.1 eV, which suggests that the depassivation reaction is limited by the migration of hydrogen within the film, without significant hydrogen trapping. Secondary-ion mass spectrometry further demonstrates the loss of hydrogen across the film thickness during annealing.

中文翻译:

硅片上非晶硅薄膜的薄膜寿命、氢含量和表面钝化质量的相关研究

我们研究了氢化非晶硅薄膜 (a-Si:H) 的复合寿命和氢含量与这些薄膜在 350-500°C 退火期间沉积在晶体硅晶片上时提供的表面钝化之间的相关性。我们的结果表明,随着退火时间的增加,a-Si:H 复合寿命和表面复合速度都以与氢浓度相似的速率发展。这表明退火过程中氢的损失是 a-Si:H 薄膜寿命缩短的直接原因,并且氢的损失发生在 a-Si:H/c-Si 界面以及大部分 a-Si:H 薄膜。我们计算出退火过程中表面去钝化反应的活化能为 0.62 ± 0.1 eV,这表明去钝化反应受到薄膜内氢迁移的限制,而没有明显的氢捕获。二次离子质谱进一步证明了退火过程中氢在整个薄膜厚度上的损失。
更新日期:2020-09-01
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