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Improved interfacial properties of electrodeposited Cu2ZnSn(S,Se)4 thin‐film solar cells by a facile post‐heat treatment process
Progress in Photovoltaics ( IF 6.7 ) Pub Date : 2020-08-20 , DOI: 10.1002/pip.3332
Sun Kyung Hwang 1 , Jae‐Hyun Park 1, 2 , Ki Beom Cheon 1 , Se Won Seo 1 , Jeong Eun Song 1 , Ik Jae Park 1, 2 , Su Geun Ji 1 , Min‐Ah Park 1, 2 , Jin Young Kim 1, 2, 3
Affiliation  

Cu2ZnSn(S,Se)4 (CZTSSe) thin‐film solar cells offer various advantages including excellent optical and electrical properties, nontoxic and earth‐abundant raw materials, and a simple fabrication process. However, these devices suffer from a high deficit of the open‐circuit voltage (VOC), mainly caused by interface recombination, which increases with increasing surface roughness. In this study, to achieve a high VOC and enhance the overall device performance, an additional heat treatment process was introduced during the fabrication of co‐electrodeposited rough CZTSSe solar cells, and its effect on the photovoltaic properties was systematically investigated using various characterization techniques including diode analysis, transient photovoltage decay measurement, evaluation of the temperature dependency of the open‐circuit voltage, current–voltage and drive‐level capacitance profile analysis, and electrochemical impedance spectroscopy. At the optimized post‐heat treatment (PHT) temperature of 200°C, a significant increase in the conversion efficiency (as high as 32%, from 7.11% to 9.40%) was observed owing to the change in the interfacial materials properties (i.e., higher conductivity and reduced interfacial nonradiative recombination), which in turn is a consequence of the diffusion of the Cd ions and the expansion of the Cu‐poor/Zn‐rich phase. The PHT‐applied CZTSSe device exhibited a high conversion efficiency close to the record‐high one reported for electrodeposited CZTSSe thin‐film solar cells. These findings confirm the potential of PHT to overcome the serious VOC deficit of CZTSSe device; moreover, this approach could possibly be extended to other device fabrication processes to achieve higher device performance and adopted to commercialization.

中文翻译:

通过便捷的后处理工艺改善电沉积Cu2ZnSn(S,Se)4薄膜太阳能电池的界面性能

Cu 2 ZnSn(S,Se)4(CZTSSe)薄膜太阳能电池具有多种优势,包括出色的光电性能,无毒且富含地球的原材料以及简单的制造工艺。但是,这些器件的开路电压(V OC)严重不足,这主要是由界面复合引起的,该缺陷会随着表面粗糙度的增加而增加。在本研究中,要实现高V OC为提高整体器件性能,在共电沉积粗糙CZTSSe太阳能电池的制造过程中引入了额外的热处理工艺,并使用各种表征技术,包括二极管分析,瞬态光电压衰减测量,评估,系统研究了其对光伏性能的影响。开路电压,电流电压和驱动级电容曲线分析以及电化学阻抗谱的温度依赖性。在优化的200°C的后热处理(PHT)温度下,由于界面材料特性的变化(即,转化效率显着提高(从7.11%增至32%,从9.11%提高至9.40%))。 ,更高的电导率和减少的界面非辐射重组),这又是Cd离子扩散和贫Cu /富锌相膨胀的结果。采用PHT的CZTSSe器件具有很高的转换效率,接近报道的电沉积CZTSSe薄膜太阳能电池创纪录的高转换效率。这些发现证实了PHT克服重症监护病房的潜力。CZTSSe器件的V OC不足;此外,该方法可以扩展到其他器件制造工艺以实现更高的器件性能,并可以商业化。
更新日期:2020-08-20
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