Abstract. In the framework of effective mass envelope function approximation, the impurity states are calculated in InGaAsP/InP core–shell quantum dots by plane wave expansion method, and the effect of electric field is considered. The impurity binding energies in 1s and 2p ± states, and the impurity transition energy between 1s state and 2p ± state are calculated and analyzed in detail with the change of shell thickness, core radius, impurity position, and electric field strength. The results show that the impurity states in the core are stable when the shell thickness is more than 0.4a * . The binding energies and transition energies decrease with the increase of core radius. The applied electric field destroys the symmetrical distribution of binding energy and transition energy about the core center. The increase or decrease of the binding energy and transition energy depend upon the position of impurity and the direction of electric field.

中文翻译：

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外电场作用下 InGaAsP/InP 核壳量子点中的杂质态

摘要。在有效质量包络函数近似的框架内，采用平面波展开法计算InGaAsP/InP核壳量子点中的杂质态，并考虑电场的影响。随着壳厚度、核半径、杂质位置和电场强度的变化，详细计算和分析了1s和2p±态的杂质结合能，以及1s态和2p±态之间的杂质跃迁能。结果表明，壳厚大于0.4a*时，核内杂质态稳定。结合能和跃迁能随着纤芯半径的增加而降低。外加电场破坏了围绕核心中心的结合能和跃迁能的对称分布。