We successfully improved quality of tin oxide (SnO 2 ) films formed on m -plane sapphire substrates by mist chemical vapor deposition. The crystal quality was characterized mainly by the FWHM of the X-ray diffraction ω -rocking curve. We found that the use of tin acetate [Sn(CH 3 COO) 4 ] solution led to the formation of high-quality SnO 2 film, where FWHM was as narrow as 0.1°. Using tin chloride (SnCl 4 ) solution, electrical and optical properties can be improved because crystal grain size was large. Therefore, on the SnO 2 layer formed with the Sn(CH 3 COO) 4 solution, the second SnO 2 layer was overgrown with the SnCl 4 solution to form a double-layer structure, where FWHM was also 0.1° and carbon impurity was lower than that of the first SnO 2 layer. Furthermore, in case of the second SnO 2 layer, we found that a growth temperature window providing...

中文翻译：

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薄雾化学气相沉积法改进m面蓝宝石衬底上氧化锡单晶

我们成功地通过雾化学气相沉积提高了在m面蓝宝石衬底上形成的氧化锡（SnO 2）膜的质量。晶体质量的特征主要在于X射线衍射ω-摇摆曲线的FWHM。我们发现，使用醋酸锡[Sn（CH 3 COO）4]溶液可形成高质量的SnO 2膜，其中FWHM窄至0.1°。使用氯化锡（SnCl 4）溶液，由于晶粒尺寸较大，因此可以改善电学和光学性能。因此，在由Sn（CH 3 COO）4溶液形成的SnO 2层上，第二SnO 2层被SnCl 4溶液过度生长以形成双层结构，其中FWHM也为0.1°并且碳杂​​质较低与第一SnO 2层相比。此外，在第二SnO 2层的情况下，