Perfluorocarbon gas is widely used in the semiconductor industry. However, perfluorocarbon has a negative effect on the global environment owing to its high global warming potential (GWP) value. An alternative solution is essential. Therefore, we evaluated the possibility of replacing conventional perfluorocarbon etching gases such as CHF 3 with C 6 F 12 O, which has a low GWP and is in a liquid state at room temperature. In this study, silicon oxynitride (SiON) films were plasma-etched using inductively coupled CF 4 + C 6 F 12 O + O 2 mixed plasmas. Subsequently, the etching characteristics of the film, such as etching rate, etching profile, selectivity over Si, and photoresist, were investigated. A double Langmuir probe was used and optical emission spectroscopy was performed for plasma diagnostics. In addition, a contact angle goniometer and x-ray photoelectron spectroscope were used to confirm the change in th...

中文翻译：

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使用低全球变暖潜势的C 6 F 12 O的液化全氟化碳前驱体的SiON薄膜的蚀刻特性

全氟化碳气体广泛用于半导体行业。但是，全氟化碳由于其较高的全球变暖潜能值（GWP）而对全球环境产生负面影响。替代解决方案至关重要。因此，我们评估了用具有低GWP且在室温下呈液态的C 6 F 12 O代替传统的全氟化碳蚀刻气体（如CHF 3）的可能性。在这项研究中，使用感应耦合的CF 4 + C 6 F 12 O + O 2混合等离子体对氮氧化硅（SiON）膜进行等离子体蚀刻。随后，研究了膜的蚀刻特性，例如蚀刻速率，蚀刻轮廓，在Si上的选择性以及光刻胶。使用双Langmuir探针，并进行了光发射光谱分析，以进行等离子体诊断。此外，