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Ultrasensitive Anomalous Hall Effect in Ta/CoFe/Oxide/Ta Multilayers
Advances in Condensed Matter Physics ( IF 1.5 ) Pub Date : 2016-01-01 , DOI: 10.1155/2016/9734610
Guang Yang 1 , Yongye Li 1 , Xi Chen 1 , Jingyan Zhang 1 , Guanghua Yu 1
Affiliation  

Ultrahigh anomalous Hall sensitivity has been demonstrated in Ta/CoFe/Oxide/Ta multilayers. By changing oxides (MgO and HfO2) and annealing temperature, different annealing dependence of sensitivity was found in MgO-sample and HfO2-sample. For the MgO-sample, the anomalous Hall sensitivity reaches 18792 Ω/T in the as-deposited state and significantly reduces as annealing temperature increases. On the contrary, the sensitivity of the as-deposited HfO2-sample is only 765 Ω/T, while it remarkably increases with annealing temperature increasing, finally reaching 14741 Ω/T at 240°C. The opposite variation of anomalous sensitivity in two samples originates from the different change of magnetic anisotropy and anomalous Hall resistance during the annealing process. Our study provides a new perspective that both the choice of oxide material and the optimization of annealing treatment are important to the anomalous Hall sensitivity.

中文翻译:

Ta/CoFe/Oxide/Ta 多层中的超灵敏反常霍尔效应

在 Ta/CoFe/Oxide/Ta 多层膜中已经证明了超高的异常霍尔灵敏度。通过改变氧化物(MgO 和 HfO2)和退火温度,在 MgO-样品和 HfO2-样品中发现了不同的退火依赖性。对于 MgO 样品,异常霍尔灵敏度在沉积状态下达到 18792 Ω/T,并且随着退火温度的升高而显着降低。相反,沉积态 HfO2 样品的灵敏度仅为 765 Ω/T,但随着退火温度的升高而显着增加,最终在 240°C 时达到 14741 Ω/T。两个样品中异常灵敏度的相反变化源于退火过程中磁各向异性和异常霍尔电阻的不同变化。
更新日期:2016-01-01
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