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Topological transitions in superconductor nanomembranes under a strong transport current
Communications Physics ( IF 5.5 ) Pub Date : 2020-08-20 , DOI: 10.1038/s42005-020-00411-4
R. O. Rezaev , E. I. Smirnova , O. G. Schmidt , V. M. Fomin

The topological defects, vortices in bulk superconductors (SCs) and phase slips in low-dimensional SCs are known to lead to the occurrence of a finite resistance. We report on a topological transition between the both types of topological defects under a strong transport current in an open SC nanotube with a submicron-scale inhomogeneity of the normal-to-the-surface component of the applied magnetic field. When the magnetic field is orthogonal to the axis of the nanotube, which carries the transport current in the azimuthal direction, the phase-slip regime is characterized by the vortex/antivortex lifetime 10−14 s versus the vortex lifetime 10−11 s for vortex chains in the half-tubes, and the induced voltage shows a pulse as a function of the magnetic field. The topological transition between the vortex-chain and phase-slip regimes determines the magnetic-field–voltage and current–voltage characteristics of curved SC nanomembranes to pursue high-performance applications in advanced electronics and quantum computing.



中文翻译:

强传输电流下超导体纳米膜的拓扑转变

已知拓扑缺陷,体超导体(SC)中的涡旋以及低维SC中的相移会导致有限电阻的出现。我们报告了在开放的SC纳米管中强迁移电流下两种类型的拓扑缺陷之间的拓扑转变,所施加的磁场的法向表面分量具有亚微米级的不均匀性。当磁场垂直于纳米管的轴并在方位方向上传输电流时,相滑状态的特征是涡旋/反涡旋寿命约为10 -14  s,而涡旋寿命约为10 -11 s表示半管中的涡旋链,感应电压显示一个脉冲,该脉冲是磁场的函数。涡旋链和相移机制之间的拓扑过渡决定了弯曲的SC纳米膜的磁场-电压和电流-电压特性,以在先进的电子学和量子计算中追求高性能。

更新日期:2020-08-20
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