Abstract In this work, an attempt is made to improve the electrochemical corrosion resistance of Zircaloy-4 by helium ions implantation. For this purpose, the Zircaloy-4 was implanted with 300 keV helium ions of fluences 1 × 1013, 1 × 1015, and 1 × 1016 ions-cm−2 by using Pelletron Accelerator. Electrochemical tests of pristine and ion-implanted samples were performed in NaCl solution and their potentiodynamic polarization curves were obtained. The results showed enhancement of the corrosion resistance of Zircaloy-4 after helium ions implantation. The corrosion rate and current density of the material were significantly reduced by the helium implantation. The decrease in corrosion parameters was attributed to helium ions diffusion inside Zircaloy-4 that reduced the electrons flow from the samples.

中文翻译：

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氦离子注入Zircaloy-4在氯化物介质中的电化学腐蚀研究

摘要 在这项工作中，尝试通过氦离子注入来提高Zircaloy-4 的耐电化学腐蚀性能。为此，使用 Pelletron Accelerator 向 Zircaloy-4 注入了 300 keV 的氦离子，其通量为 1 × 1013、1 × 1015 和 1 × 1016 离子-cm-2。在NaCl溶液中对原始样品和离子注入样品进行电化学测试，得到了它们的动电位极化曲线。结果表明，注入氦离子后，Zircaloy-4 的耐腐蚀性能得到增强。氦注入显着降低了材料的腐蚀速率和电流密度。腐蚀参数的降低归因于 Zircaloy-4 内部的氦离子扩散减少了来自样品的电子流。