Abstract A high-performance non-volatile memory with low power consumption for long battery life and for large data storage is one of the key requirements of the wearable and other electronic Internet of Things (IoT) devices. In this study, we have fabricated and investigated the resistive switching behavior of an RRAM device using the nanocomposite of polyvinyl alcohol (PVA) and graphene oxide (GO) as the switching layer in a hybrid Ag/PVA–GO/FTO structure. The resistive switching behavior of the hybrid Ag/PVA–GO/FTO device depends on the GO amount in the PVA–GO matrix. The optical analysis depicts the good interaction through the hydrogen bonds between the hydroxyl group (–OH) of PVA and C O of GO which play an important role in lowering the power consumption (sweeping voltage −0.5 V to +0.5 V, VSET = −0.28 V, VRESET = 0.34 V, switching ratio ION/IOFF = 104) and switching mechanism of the hybrid Ag/PVA–0.5 wt% GO/FTO device compared to the Ag/PVA/FTO, Ag/GO/FTO and Ag/PVA–1.0 wt% GO/FTO devices. The electrical conduction mechanism is found dominant by the SCLC and the Ohm's law corresponding to the high and low resistance states in which the combination of the trap filling and the delocalization of electrons within π bonding rings switch the device from the high to the low resistance state.

中文翻译：

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基于氧化石墨烯-聚乙烯醇纳米复合薄膜的低工作电压电阻随机存取存储器

摘要 具有低功耗、长电池寿命和大数据存储的高性能非易失性存储器是可穿戴和其他电子物联网 (IoT) 设备的关键要求之一。在这项研究中，我们制造并研究了使用聚乙烯醇 (PVA) 和氧化石墨烯 (GO) 的纳米复合材料作为混合 Ag/PVA-GO/FTO 结构中的开关层的 RRAM 器件的电阻开关行为。混合 Ag/PVA-GO/FTO 器件的电阻切换行为取决于 PVA-GO 基质中的 GO 量。光学分析描述了通过 PVA 的羟基 (-OH) 和 GO 的 CO 之间的氢键的良好相互作用，这在降低功耗方面起着重要作用（扫描电压 -0.5 V 至 +0.5 V，VSET = -0.28 V，VRESET = 0.34V，转换比 ION/IOFF = 104) 和混合 Ag/PVA–0.5 wt% GO/FTO 器件的开关机制与 Ag/PVA/FTO、Ag/GO/FTO 和 Ag/PVA–1.0 wt% GO/FTO 相比设备。发现导电机制由 SCLC 和欧姆定律主导，对应于高和低电阻状态，其中陷阱填充和 π 键环内电子离域的组合将器件从高电阻状态切换到低电阻状态.