An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96 mA/cm² and the open-circuit voltage is 0.28 V. Enhanced light trapping acquired via multiple reflections within the strain and defect free III-nitride nanorod array structures and the short-wavelength responses boosted by the wide bandgap III-nitride constituents are believed to contribute to the observed enhancements in device performance.

中文翻译：

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光陷阱在III型氮化物纳米棒/ Si（111）异质结太阳能电池中引起高短路电流密度。

对于外延生长在其上的p-GaN / i-InGaN / n-GaN二极管阵列，在功率转换中有效面积光伏效率为1.27％，不包括栅极金属接触区域和1个阳光，AM 1.5G条件下的有效面积（111）-Si。短路电流密度为14.96 mA / cm ²，开路电压为0.28V。通过应变和无缺陷的III族氮化物纳米棒阵列结构内的多次反射获得了增强的光捕获，并且通过提高了短波长响应据信宽带隙III氮化物成分有助于观察到的器件性能增强。